发明名称 HIGH NUMERICAL APERTURE PROJECTING SYSTEM FOR MICROLITHOGRAPHY
摘要 <P>PROBLEM TO BE SOLVED: To provide a high numerical aperture projecting system for projecting a high quality image on a semiconductor wafer by correcting monochromatic aberration and chromatic aberration. <P>SOLUTION: The projecting system includes a beam splitter, reticle, a reticle optical group arranged between the reticle and the beam splitter, a concave mirror, a concave mirror optical group arranged between the concave mirror and the beam splitter, a fold mirror arranged between the beam splitter and the wafer, and a wafer optical group arranged between the beam splitter and the wafer. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009016852(A) 申请公布日期 2009.01.22
申请号 JP20080202417 申请日期 2008.08.05
申请人 ASML US INC 发明人 OSKOTSKY MARK L;SMIRNOV STANISLAV
分类号 G02B17/00;H01L21/027;G02B17/08;G03F7/20 主分类号 G02B17/00
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