REAR-SURFACE IRRADIATION IMAGE SENSOR

摘要

PROBLEM TO BE SOLVED: To provide an image sensor formed in a rear-surface irradiation structure without necessity of metal reflecting layer separately, having improved photosensitivity and crosstalk on short wavelengths by controlling the depletion region of a photodiode.

SOLUTION: The image sensor includes the photodiode formed beneath the surface of a semiconductor substrate for producing photocharges by light irradiated from the rear surface of the semiconductor substrate, a reflecting gate which is formed on the photodiode at the upper part of the surface of the semiconductor substrate and to which a bias is applied for reflecting the light irradiated from the rear surface thereof to control the depletion region of the photodiode, and a transfer gate for transmitting the photocharges from the photodiode to the sense nodes of pixels.

COPYRIGHT: (C)2009,JPO&INPIT