MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING DEVICE, AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To obtain a low dielectric film having little damage that is affected when organic substance leaves when plasma treatment, such as etching treatment and ashing treatment is performed to a low dielectric film of a silicon oxide system containing organic substance, and a semiconductor device provided with the low dielectric film. SOLUTION: Gas containing a phenyl group and silicon and not containing nitrogen is used to form a low dielectric film, energy is applied to an interlayer insulating film by heat treatment, UV irradiation treatment or SPA plasma treatment as a post-processing process to thereby make moisture leave the interlayer insulating film, forming a Si-O-Si skeleton structure. COPYRIGHT: (C)2009,JPO&INPIT