发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a DRAM-type capacitor which is made minute, sufficiently secures a contact area of a contact plug and a conductive member, reduces concentration of current in a contact part by sufficiently dropping contact resistance, prevents the conductive member from missing its foot on the contact plug at the time of forming the conductive member. SOLUTION: The device is provided with: the contact plug 12 which is electrically connected to a first conductive member 2 arranged lower than a first interlayer insulating film 31; and a second conductive member 16 which is arranged above the first interlayer insulating film 31 and is electrically connected to the contact plug 12. The contact plug 12 has: a small diameter part 12a; and a large diameter part 12b disposed on the small diameter part 12a. An outer diameter D1 of the large diameter part 12b is larger than an outer diameter D2 of the small diameter part 12a. An area of the large diameter part 12b is larger than an area of a connection face 16b of the second conductive member 16 and the large diameter part 12b by a plane view. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009016596(A) 申请公布日期 2009.01.22
申请号 JP20070177188 申请日期 2007.07.05
申请人 ELPIDA MEMORY INC 发明人 NISHI HIROO
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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