发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of providing a laser beam of wavelength longer than peak wavelength of a spontaneous emission spectrum. SOLUTION: The peak wavelengthλ<SB>0</SB>of the spontaneous emission spectrum in a laser beam emitting part has the following relation, with respect to a peak wavelengthλ<SB>1</SB>at which reflectance R1(λ) for light of wavelengthλin an outgoing side mirror is maximum and peak wavelengthλ<SB>2</SB>in which reflectance R2(λ) for light of wavelengthλin a reflection side mirror is maximum:λ<SB>1</SB>>λ<SB>0</SB>and/orλ<SB>2</SB>>λ<SB>0</SB>. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009016684(A) 申请公布日期 2009.01.22
申请号 JP20070178934 申请日期 2007.07.06
申请人 NICHIA CORP 发明人 MASUI SHINGO
分类号 H01S5/028;H01S5/323 主分类号 H01S5/028
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