| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element capable of substantially improving an yield. SOLUTION: The nitride semiconductor light emitting element includes: a substrate; and a nitride semiconductor laminate configuration comprising a plurality of nitride semiconductor layers laminated on the surface of the substrate. A dug region dug in a recessed shape and a non-dug region which is not dug are formed on the surface of the substrate, the dug region is provided with a bottom surface and a side face extending upwards from the end part of the bottom surface, and the side face of the dug region and the surface of the non-dug region are connected through a curved surface. COPYRIGHT: (C)2009,JPO&INPIT
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