发明名称 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, Materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
摘要 The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
申请公布号 US2009023083(A1) 申请公布日期 2009.01.22
申请号 US20080228010 申请日期 2008.08.07
申请人 COLBURN MATTHEW E;CARTER KENNETH RAYMOND;MCCLELLAND GARY M;PFEIFFER DIRK 发明人 COLBURN MATTHEW E.;CARTER KENNETH RAYMOND;MCCLELLAND GARY M.;PFEIFFER DIRK
分类号 G03F1/00;B29C33/38;G03F7/00;G03F7/004;H01L21/768 主分类号 G03F1/00
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