| 摘要 |
<P>PROBLEM TO BE SOLVED: To form fine patterns through a smaller number of steps and more simply in wafer treatment of performing a plurality of resist-pattern forming processes on a predetermined underlayer film. <P>SOLUTION: After the formation of a first resist pattern, the surface of the first resist pattern is silanized. After that, a second resist pattern is formed. Thus, the surface of the resist pattern is silanized between the previous and following resist-pattern forming processes. After a predetermined resist pattern is formed through a plurality of resist-pattern forming processes, the underlayer film is etched with the resist pattern as a mask. <P>COPYRIGHT: (C)2009,JPO&INPIT |
