METHOD FOR FABRICATING LIGHT-EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a light-emitting diode which can expand a light-emitting area and has high light-emitting efficiency and heat dissipation effect.

SOLUTION: The method includes: a step to form a high selective layer on a semiconductor base; a step to form a light-emitting structure on the high selection-ratio layer by forming an n-type semiconductor layer on the high selective layer and forming a p-type semiconductor layer on the n-type semiconductor layer; a step to form a p-type Ohmic contact layer on the light-emitting structure; a step to form a metal layer on the p-type Ohmic contact layer; a step to remove the semiconductor base and the high selective layer; a step to form an n-type contact electrode at a position closely adjacent to the n-type semiconductor layer; and a step to form a transparent conductive layer at a position closely adjacent to the n-type semiconductor layer.

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