| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which suppresses an increase of manufacturing processes, and also suppresses the deterioration of the performance of the whole device even if characteristic improving treatment are carried out for a P-type transistor and an N-type transistor. SOLUTION: A cover film 11 with a stress produced by heating is formed on a semiconductor substrate 1 in the first region. Heating treatment is carried out for the semiconductor substrate 1 on which the cover film 11 is formed. The stress is thereby produced in the cover film 11, and a first characteristic improving treatment for improving the characteristics of a first transistor is carried out for the semiconductor substrate 1 as a result of the stress. A second characteristic improving treatment for improving the characteristics of a second transistor is also carried out for the semiconductor substrate 1 in the second region exposed from the cover film 11 by using the cover film 11 as a mask. COPYRIGHT: (C)2009,JPO&INPIT |
