| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitive semiconductor acceleration sensor having a plurality of sensor parts formed on a common semiconductor substrate, and having an excellent temperature characteristic. SOLUTION: In a sensor chip 11, a sensor part 12 and a sensor part 13 are formed side by side in the longitudinal direction. A groove-shaped thin-walled part 31 for forming the thickness of the sensor chip 11 thinly is formed approximately in parallel with the shortwise direction from the surface 20e of an element formation substrate 20c toward a buried oxide film 20b on a domain between the sensor part 12 and the sensor part 13, and a groove-shaped thin-walled part 32 is formed oppositely to the thin-walled part 31, from the surface 20d of a support substrate 20a toward the buried oxide film 20b. Since warpage of the sensor chip 11 resulting from an internal stress of the sensor chip 11 or a temperature change caused by an adhesive layer 30 can be reduced in the longitudinal direction by forming the thin-walled part 31 and the thin-walled part 32 on the sensor chip 11, the temperature characteristic can be improved. COPYRIGHT: (C)2009,JPO&INPIT
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