发明名称 |
Forming dual metal complementary metal oxide semiconductor integrated circuits |
摘要 |
Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The metal layer may have a workfunction most suitable for forming one type of transistor, but is used to form both the n and p-type transistors. The workfunction of the metal layer may be converted, for example, by ion implantation to make it more suitable for use in forming transistors of the opposite type.
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申请公布号 |
US2009020825(A1) |
申请公布日期 |
2009.01.22 |
申请号 |
US20080283217 |
申请日期 |
2008.09.10 |
申请人 |
DOCZY MARK;TAYLOR MITCHELL;BRASK JUSTIN K;KAVALIEROS JACK;DATTA SUMAN;METZ MATTHEW V;CHAU ROBERT S;HWANG JACK |
发明人 |
DOCZY MARK;TAYLOR MITCHELL;BRASK JUSTIN K.;KAVALIEROS JACK;DATTA SUMAN;METZ MATTHEW V.;CHAU ROBERT S.;HWANG JACK |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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