| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a bonding pad has a high voltage-proof structure in a high voltage-proof device. <P>SOLUTION: A semiconductor region 25 under three layers of metal film layers 37, 38 and 39 constituting the bonding pad 22 is insulated from a semiconductor region 25 around the semiconductor region 25 under the bonding pad 22. To that end, the periphery of the semiconductor region under the bonding pad 22 is surrounded by DTI 36. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
