| 摘要 |
A high-frequency transistor includes an intrinsic region provided to form an active element on the substrate, plural source and drain fingers alternately located with each other in the intrinsic region in parallel, each including a strip-form interconnect metal layer and contacts formed thereon, plural gate fingers respectively formed between the source and drain fingers and each gate finger including a strip-form gate semiconductor layer, a connecting region provided on the substrate adjacent to and outside of the intrinsic region, plural gate connection semiconductor layers provided in the connecting region according to groups of the gate fingers, each group including some gate fingers adjacent to each other, each gate connection semiconductor layer being connected to end portions of the some gate fingers, and gate connection interconnect metal layers respectively formed on the gate connection semiconductor layers connected thereto through third contacts.
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