METHOD FOR FORMING A THIN FILM STRUCTURE AND METHOD FOR FORMING A GATE STRUCTURE USING THE SAME

摘要

A method for forming a thin film structure and a method for forming a gate electrode using the same are provided to reduce a process failure of a patterning process by preventing the particle from remaining on the surface of the thin film structure due to an organic material. A first thin film(102) is formed on a substrate(100). A part of the first thin film is doped with the impurity. A thermal process using the oxygen gas is performed in the first thin film doped with the impurity. The organic material remaining the first thin film is removed. An oxide film(106) is formed on the first thin film. A second thin film on the oxide film is made of the nitride.