METHOD OF MANUFACTURING A FLASH MEMORY DEVICE

摘要

A method for manufacturing a flash memory device is provided to prevent abnormal oxidation of a tungsten film in an annealing process and implement a high speed element by forming a tungsten nitride film in a side wall of the tungsten film for a control gate. A semiconductor substrate includes a tunnel insulating layer(102), a first conductive film, a dielectric film(106) and a second conductive film(108). The second conductive film and the dielectric film are patterned. An anti-oxidation layer(114) is formed on the first conductive film including the patterned second conductive film and the first conductive film including the dielectric film. The anti-oxidation layer remains in the side wall of the second conductive film by etching the first conductive film and the anti-oxidation film. The remaining anti-oxidation layer is surrounded by forming a first insulating film. A second insulating layer with an air gap is formed between the first insulating films of both sides of the first conductive layer.