WIRING STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING A WIRING STRUCTURE

摘要

A wiring structure of a semiconductor device and a method for forming the same are provided to suppress the generation of an electrical defect by using an insulating film pattern lower than a pad a blocking pattern formed on the insulating film pattern. A substrate includes a first pad(124) and a second pad(126) connected to a contact area. A first interlayer insulating film pattern(122) is formed on a substrate to be lower than the upper side of the first pad and the second pad. A blocking pattern(130) is formed on the first interlayer insulating film pattern. A second interlayer insulating film(140) has an opening part exposing the surface of the first pad and the blocking pattern. The spacer is formed in the opening part. A contact plug(150) is formed inside the opening part and is electrically connected to the first pad.