发明名称 METHOD FOR MANUFACTURING EUV LIGHT SOURCE, EUV EXPOSURE APPARATUS AND ELECTRON DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a means capable of easily supplying a target material with a low density suitable for an EUV light source. <P>SOLUTION: The EUV light source changes the target into a plasma state to emit EUV light from the generated plasma, wherein the target is discrete, the surface area of the target is &ge;1.5 times that of a sphere having the material and mass identical to those of the target. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009016237(A) 申请公布日期 2009.01.22
申请号 JP20070178184 申请日期 2007.07.06
申请人 NIKON CORP 发明人 MURAKAMI KATSUHIKO
分类号 H05G2/00;G21K5/08;H01L21/027 主分类号 H05G2/00
代理机构 代理人
主权项
地址