| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heat dissipation plate for a semiconductor device that achieves the high thermal conductance efficiency in a simple configuration and allows adjustment of the thermal expansion coefficient. <P>SOLUTION: A plate body 10 is structured in such a manner that multiple copper layers 11c, graphite layers 12 and molybdenum layers 13 are alternatively laminated, wherein external copper layers 11a, 11b are provided on both sides of the laminated layers and a frame part 15 made of a blended copper and molybdenum material is provided in a peripheral border of the laminated layers. <P>COPYRIGHT: (C)2009,JPO&INPIT |
