| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a single crystal silicon carbide substrate, capable of preparing a high-quality single crystal silicon carbide substrate in a short operation time. SOLUTION: The single crystal silicon carbide substrate with a high quality can be produced in a short period of time by converting a micropipe 2 or a displacement 3 contained in a seed crystal substrate 1 having a ä0001} plane as the principal plane into a pit 4 by immersion in a strong alkali molten salt, covering all the surface of the substrate 1 with a mask 5 consisting of carbon or a high-melting point metal, such as molybdenum, removing the mask 5 in a place other than that of a mask 6 of the pit 4 by chemical mechanical polishing or mechanical polishing, and covering all the surface of the substrate 1 with a newly grown epitaxial growth layer 7. COPYRIGHT: (C)2009,JPO&INPIT
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