| 摘要 |
A write operation is performed in a memory device. During a first stage of the write operation, a signal is applied to gating circuitry at a first voltage level for coupling a data bus line to a bit line when the data bus line is unmasked and for decoupling the data bus line from the bit line when the data bus line is masked. During one or more subsequent stages of the write operation, the signal voltage level is changed for enabling completion of the write operation.
|
