发明名称 |
TECHNIQUE FOR FORMING THE DEEP DOPED COLUMNS IN SUPERJUNCTION |
摘要 |
A method of manufacturing a semiconductor device is disclosed and starts with a semiconductor substrate having a heavily doped N region at the bottom main surface and having a lightly doped N region at the top main surface. There are a plurality of trenches in the substrate, with each trench having a first extending portion extending from the top main surface towards the heavily doped region. Each trench has two sidewall surfaces in parallel alignment with each other. A blocking layer is formed on the sidewalls and the bottom of each trench. Then a P type dopant is obliquely implanted into the sidewall surfaces to form P type doped regions. The blocking layer is then removed. The bottom of the trenches is then etched to remove any implanted P type dopants. The implants are diffused and the trenches are filled.
|
申请公布号 |
US2009023260(A9) |
申请公布日期 |
2009.01.22 |
申请号 |
US20060343329 |
申请日期 |
2006.01.31 |
申请人 |
THIRD DIMENSION (3D) SEMICONDUCTOR, INC. |
发明人 |
BLANCHARD RICHARD A. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|