发明名称 NONVOLATILE SEMICONDUCTOR MEMORY AND MEMORY DEVICE USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To hold reliability of binary data when multi-level data and binary data are mixed and stored in one page. <P>SOLUTION: A memory cell array 21 has a plurality of pages, multi-level data is stored in a first region of each page, and binary data is stored in predetermined second region. When binary data is read out from one page of the memory cell array 21, a voltage generating circuit 31 generates read-out voltage being lower than read-out voltage when multi-level data is read out, and supplies it to a word line of a non-selection page. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009015977(A) 申请公布日期 2009.01.22
申请号 JP20070177599 申请日期 2007.07.05
申请人 TOSHIBA CORP 发明人 KONDO KATSUHISA
分类号 G11C16/02;G11C16/06 主分类号 G11C16/02
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