| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method of manufacturing a semiconductor device capable of stably forming a desired gate electrode pattern even when the arranging interval of the gate electrode is reduced and capable of preventing the degradation of characteristics and reliability. SOLUTION: A plurality of recessed parts 14 are formed on a semiconductor substrate 11, and an insulating film 15 is formed on the semiconductor substrate 11 so as to cover the inner wall of the plurality of recessed parts 14. Resist 16 is formed on the insulating film 15 and a plurality of openings 13 narrower than the corresponding recessed parts 14 on the plurality of recessed pats 14 are respectively formed on the resist 16 by exposure and development. The insulating film 15 is anisotropically etched with the resist 16 as a mask and a part of the bottom surface of the recessed parts 14 is exposed. A WSiN film 21 and an Au film 22 (conductor film) are formed on the exposed bottom surface of the recessed parts 14 and the insulating film 15. The WSiN film 21 and the Au film 22 are removed in a region other than the plurality of recessed parts 14, and the gate electrode 23 is formed by the WSiN film 21 and the Au film 22 left inside each recessed part 14. COPYRIGHT: (C)2009,JPO&INPIT
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