| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device in which time-dependent deterioration of brightness is suppressed. <P>SOLUTION: The semiconductor light-emitting device is composed of (Al<SB>x</SB>Ga<SB>1-x</SB>)<SB>y</SB>In<SB>1-y</SB>P (0≤x≤1, 0≤y≤1) formed on a substrate composed of GaAs, and has a light-emitting layer with a double heterostructure, wherein the light-emitting layer includes an active layer and a p-type clad layer in this order from a side of the substrate, and the p-type clad layer includes a carrier composed of Zn at concentrations of a range of 6.0×10<SP>17</SP>cm<SP>-3</SP>to 7.5×10<SP>17</SP>cm<SP>-3</SP>. <P>COPYRIGHT: (C)2009,JPO&INPIT |
