| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a cleaning method where the damage of the worked face in a CVD-SiC compact, impurities produced upon working or the like can be effectively removed. <P>SOLUTION: Disclosed is a method for cleaning a CVD-SiC compact characterized in that an SiC compact produced by a CVD process is worked, so as to be a desired shape, and is subjected to acid cleaning, next, (1) an electrolytic polishing treatment where a positive potential of≥2.0 V is applied with the CVD-SiC compact as an anode, so as to form a film of silicon dioxide on the surface thereof and (2) a dissolving/removing treatment for the silicon dioxide film with hydrofluoric acid based acid are performed in succession, and thereafter, the SiC compact is cleaned with pure water and is dried. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
