| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of exerting excellent TFT characteristics even if a barrier metal layer is omitted and directly and definitely connecting source-drain wires to a semiconductor layer of the TFT. SOLUTION: A thin film transistor substrate having the semiconductor layer 33 of the thin film transistor and source-drain electrodes 28, 29, wherein the source-drain electrodes 28, 29 are composed of nitrogen containing layers that contain nitrogen, or oxygen/nitrogen containing layers 28a, 29a, and thin films 28b, 29b of pure Cu or Cu alloys. A part or the whole of nitrogen constituting the nitrogen containing layer or a part or the whole of nitrogen or oxygen constituting oxygen/nitrogen containing layer is coupled with Si in the semiconductor layer 33 of the thin film transistor. In addition, the thin films 28b, 29b of pure Cu or Cu alloys are connected to the semiconductor layer 33 of the thin film transistor through the nitrogen containing layer or the oxygen/nitrogen containing layers 28a, 29a. COPYRIGHT: (C)2009,JPO&INPIT |
