| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device which prevents the protrusion of a silicide film formed in a source/drain contact region toward a silicon substrate side, wherein a driving force is given by giving stress to a channel region, and avoids the occurrence of a junction leakage defect and a gate leakage defect, and a manufactured semiconductor. SOLUTION: The semiconductor device includes a semiconductor substrate 101 containing silicon, a semiconductor region zoned by an element isolation insulating film 102 formed in the semiconductor substrate 101, a gate electrode formed via a gate insulating film 103 in the semiconductor region, a first diffusion layer 107 formed in the semiconductor region, a slicon germanium region 113 formed between the gate electrode and the first diffusion layer 107 and the element isolation insulating film 102, and a silicide film 114 formed on the SiGe region 113, wherein the SiGe region 113 is thickest in a portion close to the gate electrode or the element isolation insulating film 102. COPYRIGHT: (C)2009,JPO&INPIT
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