发明名称 |
Methods of sputtering a protective coating on a semiconductor substrate |
摘要 |
Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.
|
申请公布号 |
US2009020417(A1) |
申请公布日期 |
2009.01.22 |
申请号 |
US20040952088 |
申请日期 |
2004.09.29 |
申请人 |
KIM JISOO;SHON JONG;YEN BI MING;LOEWENHARDT PETER |
发明人 |
KIM JISOO;SHON JONG;YEN BI MING;LOEWENHARDT PETER |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|