| 摘要 |
A planarization method is provided. The method includes the steps of providing a substrate with a first region and a second region, and having a plurality of protrusions of different densities on a surface of said substrate; forming a first dielectric layer on the substrate to fill spaces between the plurality of protrusions; forming a second dielectric layer on the first dielectric layer, wherein the second dielectric layer is formed with a protruding tip having a height higher than heights of the protrusions; and partially removing said first dielectric layer and said second dielectric layer to planarize said first dielectric layer and said second dielectric layer and expose top surfaces of said protrusions.
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