发明名称 |
INTERNAL VOLTAGE GENERATOR AND CONTROL METHOD THEREOF, AND SEMICONDUCTOR MEMORY DEVICE AND SYSTEM INCLUDING THE SAME |
摘要 |
An internal voltage of a semiconductor memory device is controlled, where the internal voltage is set according to a reference voltage. The reference voltage is controlled according to first control data to increase the internal voltage to be higher than a target voltage in a power-up operation, and second control data is read. The reference voltage is then controlled according to the second control data to decrease the internal voltage to the target voltage.
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申请公布号 |
US2009021985(A1) |
申请公布日期 |
2009.01.22 |
申请号 |
US20080175494 |
申请日期 |
2008.07.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BYEON DAE-SEOK |
分类号 |
G11C16/06;G11C5/14;G11C7/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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