发明名称 RESIST LOWER LAYER FILM FORMING COMPOSITION AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist lower layer film forming composition capable of forming a resist lower layer film capable of transferring a resist pattern with satisfactory fidelity and reproducibility to a substrate to be processed because the composition has a film curing property, superior etching resistance, and because the pattern formed by a dry etching process is hardly bent. <P>SOLUTION: The resist lower layer film forming composition includes (A) a resin including a group represented by general formula (1) and an aromatic hydrocarbon group and (B) a solvent. In the general formula (1), n represents 0 or 1, R<SP>1</SP>represents a methylene group, or the like, which may be substituted, and R<SP>2</SP>represents a hydrogen atom or the like. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009014816(A) 申请公布日期 2009.01.22
申请号 JP20070173847 申请日期 2007.07.02
申请人 JSR CORP 发明人 NOMURA NAKAATSU;MINEGISHI SHINYA;KONNO YOSUKE;NAKAJIMA HIROMITSU
分类号 G03F7/11;C08G8/08;H01L21/027 主分类号 G03F7/11
代理机构 代理人
主权项
地址