| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that power consumption is increased in an unoperated state while storing data caused by an increase in leakage current of a transistor which occurs when a threshold voltage of the transistor configured to operate a SRAM circuit at a low voltage is reduced. <P>SOLUTION: The leakage current of a MOS transistor in a memory cell is reduced by controlling the potential of the source line ss1 of a driving MOS transistor in a SRAM memory cell MC. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
