OXIDE SEMICONDUCTOR, AND THIN FILM TRANSISTOR HAVING THE SAME AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an oxide semiconductor containing GaxInyZnzoxide and a new material, and to provide a thin film transistor whose property is improved by adding the GaxInyZnzoxide and the new material as the channels of the thin film transistor, and its manufacturing method.

SOLUTION: The oxide semiconductor contains the GaxInyZnzoxide, and at least one material selected from groups consisting of a 4A-group material, oxide of the 4A-group material and a rare earth material.

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