| 摘要 |
PROBLEM TO BE SOLVED: To perform laser annealing without damaging a gate electrode and a semiconductor layer in a transistor of a microstructure. SOLUTION: A first interlayer dielectric is formed on a pair of dopant regions functioning as a source region or a drain region of a semiconductor film formed on an insulating substrate, and the first interlayer dielectric and a second interlayer dielectric are formed on the gate electrode. The first interlayer dielectric is formed with optical film thickness for reducing the reflectance of light in a specified wavelength region, which is emitted to the pair of dopant regions, and the second interlayer dielectric is formed with optical film thickness for increasing the reflectance of the light in the specified wavelength region, which is emitted to the gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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