| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric converter which has less degradation in sensitivity and is capable of obtaining good transfer characteristics, a manufacturing method thereof, and an imaging system. SOLUTION: The photoelectric converter includes: a photo diode 5 as a photoelectric conversion part having a photoelectric conversion region and an n-type layer 3 functioning as a charge storage region wherein charges generated in the photoelectric conversion region are stored; and a transfer transistor which is disposed between the photo diode 5 and a floating diffusion region 6 and transfers signal charges stored in the n-type layer 3 to the floating diffusion region 6. The n-type layer 3 has a first boundary side parallel with a channel breadthwise direction (Y direction) of the transfer channel and a second boundary side parallel with a channel lengthwise direction (X direction) of the transfer channel. A control electrode 8 of the transfer transistor has a first portion 8a which extends along the channel breadthwise direction and is disposed so as to pile on the first boundary side and a second portion 8b which extends along the channel lengthwise direction and is disposed so as to pile on the second boundary side. COPYRIGHT: (C)2009,JPO&INPIT
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