| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element having a vertical ridge part, and capable of preventing generation of a void on a side surface of a current constriction layer and the occurrence of a stress distribution defect caused by asymmetricalness of an electrode; and to provide a method of manufacturing the same. SOLUTION: The semiconductor laser element has: a semiconductor substrate; a compound semiconductor layer formed by stacking a first clad layer 2, an active layer 3 and a second clad layer 4 on the semiconductor substrate 1; a ridge part 12 formed into a stripe-like shape on a part of the compound semiconductor layer; the current constriction layer 7 formed on the compound semiconductor layer and side surfaces of the ridge part 12; and electrodes 8, 9a and 10 formed by covering the upper surface of the ridge part 12 and the current constriction layer 7. The electrodes 8, 9a and 10 includes: a first electrode layer 8 formed on the upper surface of the current constriction layer 7 and the upper surface of the ridge part; a second electrode layer 9a formed tightly on the side surfaces of the current constriction layer 7 and the upper surface of the first electrode layer 8; and a third electrode layer 10 formed on the upper surface and the side surfaces of the second electrode layer 9a. Film thicknesses formed on both the side surfaces of the second electrode layer 9a are equal to each other. COPYRIGHT: (C)2009,JPO&INPIT
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