发明名称 |
HIGH VOLTAGE TRANSISTOR WITH IMPROVED HIGH SIDE PERFORMANCE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>A high voltage NMOS transistor is proposed where the p-doped body is isolated against the p-doped substrate by a DN well showing a pinch-off region where the depth of the DN-well is at minimum. By the forming space charge region at raising drain potentials a shielding of the drain potential results because the space charge region touches the field oxide between source and drain at the pinch-off region. An operation at the high side at enhanced voltage levels is possible.</p> |
申请公布号 |
EP2016623(A1) |
申请公布日期 |
2009.01.21 |
申请号 |
EP20070724276 |
申请日期 |
2007.04.16 |
申请人 |
AUSTRIAMICROSYSTEMS AG |
发明人 |
KNAIPP, MARTIN;ROEHRER, GEORG;PARK, JONG, MUN |
分类号 |
H01L29/78;H01L21/331;H01L29/06;H01L29/08;H01L29/10;H01L29/40;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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