| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for reducing the unevenness of elements by effectively removing the metal element for encouraging the crystallization of a semiconductor film and retained in the semiconductor film, after the semiconductor film having a crystal structure is obtained by using the metal element. <P>SOLUTION: In the step of forming a gettering site, a plasma CVD method is used, and as material gases, a monosilane gas, a rare gas element and a hydrogen are used for forming the film. The rare gas element is included in a high concentration such as, for example, 1×10<SP>20</SP>/cm<SP>3</SP>to 1×10<SP>21</SP>/cm<SP>3</SP>. The semiconductor film 16 having an amorphous structure or a noncrystalline silicon film as a representative is provided. <P>COPYRIGHT: (C)2003,JPO</p> |
