Semiconductor device with a shielding bond wire

摘要

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip (1000) which is mounted on a main surface of a wiring substrate (6000), and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is. Particularly, in a high-frequency power amplifier module provided with a semiconductor chip having multistage amplifying transistors (2000,3000) on a wiring substrate: an angle formed by a first auxiliary line connecting bonding portions to each other at the two ends of an input bonding wire (9000D) connecting a bonding input electrode (2000B) for a specific one of the amplifying transistors to the wiring substrate arid a second auxiliary line connecting bonding portions to each other at the two ends of an output bonding wire (9000A) connecting an bonding output electrode (3000C) for another amplifying transistor at a stage following the specific amplifying transistor to the wiring substrate is in the range 72 degrees to 180 degrees; and a gap between bonding portions of the bonding input electrode and the bonding output electrode is at least 0.3 mm but smaller than 0.8 mm. As a result, the high-frequency characteristic of the power amplifier module can be improved and the size thereof can be reduced.