发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor light emitting device and a manufacturing method thereof are provided to prevent the rotation of the polarized light of each semiconductor laser device by forming an average value of the thickness of the Au plating in a first region and a second region non-uniformly. A plurality of semiconductor laser devices(10a,10b) are formed on the same substrate(11). The Au plating(16) is formed in a main surface of the plurality of semiconductor laser devices. A plurality of semiconductor lasers is mounted on a package(22) by using the soldering coated on the Au plating. The first region and the second region face to cross the light emitting region of each semiconductor laser device. The thickness of the Au plating is uneven in the first and second regions of each semiconductor laser device.
申请公布号 KR20090008115(A) 申请公布日期 2009.01.21
申请号 KR20080050005 申请日期 2008.05.29
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 HISA YOSHIHIRO;YAMAGUCHI TSUTOMU;NISHIDA TAKEHIRO;HIRAMATSU KENJI
分类号 H01S5/02;H01S5/022 主分类号 H01S5/02
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