| 摘要 |
A semiconductor device is provided to secure a safe reverse bias operation region and obtain a trench gate structure. A second semiconductor layer is formed on a first semiconductor layer. A plurality of trench regions is extended to the first semiconductor layer from the second semiconductor layer. A plurality of trench regions are separated. Each trench region includes an effective trench gate region(1), a dummy trench region(2a,2b). The gate electrode layer is formed in the effective trench gate region. The gate electrode layer is electrically connected to the gate electrode through a gate insulating layer. The gate electrode is separated from the dummy trench region.
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