Cap for semiconductor device

摘要

In a cap (10) for a semiconductor device in which a light transmissive window (14) is fixed to a cap body (12) provided with a light transmissive opening (12a) using low-melting glass as a fixing material (16) so that the light transmissive window (14) covers the light transmissive opening (12a), the low-melting glass is leadless vanadate-series low-melting glass, and the light transmissive window (14) is fixed to the cap body (12) through an eutectic alloy layer formed by an eutectic reaction of vanadium contained in the low-melting glass and metal applied on the surface of the cap body (12).