| 摘要 |
A flash memory device and a repairing method thereof are provided to improve repair efficiency of a flash memory device by performing repair operation with string unit instead of column unit. A NAND flash memory device(100) comprises a main cell array(10) and a redundancy cell array(11). The main cell array and the redundancy cell array comprise a plurality of strings. One string comprises a plurality of cells which is serially connected. A main page buffer(12a, 12b) and a main column gate(13a, 13b) are arranged in a top and a bottom of the main cell array. The main page buffer is selected by an address fuse block(17a, 17b). A redundancy page buffer(14a, 14b) and a redundancy column gate(15a, 15b) are arranged in a top and a bottom of the redundancy cell array. The redundancy page buffer is selected by the redundancy column gate. The address fuse block outputs an output signal(rYENt, rYENb) according to an external address. The output signal is transmitted to an I/O fuse block(18a, 18b) and the redundancy column gate. A block fuse part(19) determines a state of a corresponding memory block. A data line selecting part(20) connects one among a first, a third, and a fourth data lines to a second data line. |
