Method for Manufacturing Silicon ON Insulator Wafer Improved in Surface Roughness Using SiGe Sacrificial Layer,申请号KR20060138657-传众专利搜索

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发明名称	Method for Manufacturing Silicon ON Insulator Wafer Improved in Surface Roughness Using SiGe Sacrificial Layer
摘要
申请公布号	KR100880106(B1)	申请公布日期	2009.01.21
申请号	KR20060138657	申请日期	2006.12.29
申请人		发明人
分类号	H01L21/20;H01L27/12	主分类号	H01L21/20
代理机构		代理人
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地址

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