| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to broaden a width of a storage node contact, thereby suppressing generation of misalignment of a capacitor positioned on the storage node contact. A transistor is formed in a substrate(100) including an active area and an inactive region. A first insulation layer(270) is formed on the substrate. A second insulation layer(330) including a bit line is formed on the first insulation layer. A contact mask pattern(400) is formed on the second insulation layer. A barrier layer(431) is formed within the second insulation layer. A first etching process using the contact mask pattern is performed to form a contact hole in the second insulation layer. A second etching process is performed. A width of the contact hole is extended to form a second storage node contact hole. A first storage node contact hole is formed in the first insulation layer by using the contact mask pattern. Conductive material is reclaimed in the first and second storage node contact hole. First and second storage node contacts(460,470) are formed.
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