发明名称 |
Memory array with sub-minimum feature size word line spacing and method of fabrication |
摘要 |
<p>A non-volatile memory array (30) has word lines (32) spaced a sub-F (sub-minimum feature size F) width apart and bit lines generally perpendicular to the word lines. The present invention also includes a method for word-line patterning of a non-volatile memory array which includes generating sub-F word lines from mask generated elements with widths of at least a minimum feature size F.
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申请公布号 |
EP1746645(A3) |
申请公布日期 |
2009.01.21 |
申请号 |
EP20060117424 |
申请日期 |
2006.07.18 |
申请人 |
SAIFUN SEMICONDUCTORS LTD. |
发明人 |
EITAN, BOAZ;BLOOM, ILAN;IRANI, RUSTOM |
分类号 |
H01L21/8246;H01L21/033;H01L21/3213;H01L27/115 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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