发明名称 |
Source/drain extension implant process for use with short time anneals |
摘要 |
The present invention provides, in one embodiment, a process for fabricating a metal oxide semiconductor (MOS) device (100). The process includes forming a gate (120) on a substrate (105) and forming a source/drain extension (160) in the substrate (105). Forming the source/drain extension (160) comprises an abnormal-angled dopant implantation (135) and a dopant implantation (145). The abnormal-angled dopant implantation (135) uses a first acceleration energy and tilt angle of greater than about zero degrees. The dopant implantation (145) uses a second acceleration energy that is higher than the first acceleration energy. The process also includes performing an ultrahigh high temperature anneal of the substrate (105), wherein a portion (170) of the source/drain extension (160) is under the gate (120).
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申请公布号 |
US7479668(B2) |
申请公布日期 |
2009.01.20 |
申请号 |
US20060370339 |
申请日期 |
2006.03.08 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JAIN AMITABH;POLLACK GORDON |
分类号 |
H01L31/112;H01L21/265;H01L21/324;H01L21/336;H01L21/8238;H01L29/78 |
主分类号 |
H01L31/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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