METHOD OF PRODUCING MONO-CRYSTALLINE PLATES OF ARSENIDE-INDIUM

摘要

FIELD: metallurgy, crystal growing. ^ SUBSTANCE: invention refers to semi-conductor technology of AIIIBV type compositions. The method is implemented by means of bombarding mono-crystalline plates of arsenide-indium with fast neutrons with following heating, annealing and cooling. The mono-crystalline plates are subject to bombardment with various degree of compensation at density of flow not more, than 1012 cm-2 c-1 till fluence F=(0.5/5.0).1015 cm-2 , while annealing is carried out at 850/900°C during 20 minutes at the rate of heating and cooling 10 deg/min and 5 deg/min correspondingly. ^ EFFECT: production of arsenide-iridium plate with upgraded uniformity and thermal-stability of electro-physical characteristics and with decreased degree of compensation. ^ 2 ex, 1 tbl