| 发明名称 |
Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby |
| 摘要 |
A process capable of integrating both planar and non-planar transistors onto a bulk semiconductor substrate, wherein the channel of all transistors is definable over a continuous range of widths.
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| 申请公布号 |
US7479421(B2) |
申请公布日期 |
2009.01.20 |
| 申请号 |
US20050238444 |
申请日期 |
2005.09.28 |
| 申请人 |
INTEL CORPORATION |
发明人 |
KAVALIEROS JACK T.;BRASK JUSTIN K.;DOYLE BRIAN S.;SHAH UDAY;DATTA SUMAN;DOCZY MARK L.;METZ MATTHEW V.;CHAU ROBERT S. |
| 分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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